Light-matter interaction and lasing in semiconductor nanowires: A combined finite-difference time-domain and semiconductor Bloch equation approach

Robert Buschlinger, Michael Lorke, and Ulf Peschel
Phys. Rev. B 91, 045203 – Published 20 January 2015; Erratum Phys. Rev. B 91, 159903 (2015)

Abstract

We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application, we present simulations of the dynamics of a nanowire laser including optical pumping, seeding by spontaneous emission, and the selection of lasing modes.

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  • Received 28 October 2014

DOI:https://doi.org/10.1103/PhysRevB.91.045203

©2015 American Physical Society

Erratum

Authors & Affiliations

Robert Buschlinger1, Michael Lorke2, and Ulf Peschel1

  • 1Institute of Optics, Information and Photonics, University of Erlangen-Nürnberg, 91058 Erlangen, Germany
  • 2Bremen Center for Computational Materials Science BCCMS, University of Bremen, 28359 Bremen, Germany

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Issue

Vol. 91, Iss. 4 — 15 January 2015

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