Abstract
We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application, we present simulations of the dynamics of a nanowire laser including optical pumping, seeding by spontaneous emission, and the selection of lasing modes.
- Received 28 October 2014
DOI:https://doi.org/10.1103/PhysRevB.91.045203
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