Magnetic field induced switching of the antiferromagnetic order parameter in thin films of magnetoelectric chromia

Lorenzo Fallarino, Andreas Berger, and Christian Binek
Phys. Rev. B 91, 054414 – Published 19 February 2015

Abstract

A Landau-theoretical approach is utilized to model the magnetic field induced reversal of the antiferromagnetic order parameter in thin films of magnetoelectric antiferromagnets. A key ingredient of this peculiar switching phenomenon is the presence of a robust spin polarized state at the surface of the antiferromagnetic films. Surface or boundary magnetization is symmetry allowed in magnetoelectric antiferromagnets and experimentally established for chromia thin films. It couples rigidly to the antiferromagnetic order parameter and its Zeeman energy creates a pathway to switch the antiferromagnet via magnetic field application. In the framework of a minimalist Landau free energy expansion, the temperature dependence of the switching field and the field dependence of the transition width are derived. Least-squares fits to magnetometry data of (0001) textured chromia thin films strongly support this model of the magnetic reversal mechanism.

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  • Received 20 October 2014
  • Revised 8 December 2014

DOI:https://doi.org/10.1103/PhysRevB.91.054414

©2015 American Physical Society

Authors & Affiliations

Lorenzo Fallarino1, Andreas Berger1, and Christian Binek1,2,*

  • 1CIC NanoGUNE, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian, Spain
  • 2Department of Physics & Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0111, USA

  • *Corresponding author: cbinek@unl.edu

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Issue

Vol. 91, Iss. 5 — 1 February 2015

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