Ceramics-Silikáty (Mar 2011)
DIFFUSION AT THE INTERFACE BETWEEN Ag DOPED SiO2 LAYERS AND THE GLASS SUBSTRATE
Abstract
Silica layers containing silver were prepared by the sol-gel method and deposited on the Float glass substrate. Heat treatment at different temperatures (60 and 550°C) and time periods (1 to 6 hours) followed afterwards. Silica layer texture without any particles was observed by electron microscopy. Silver, sodium, tin and silicon concentration profiles on “tin” side of Float glass substrates and in the deposited layers were evaluated by the help of Secondary Neutral Mass Spectrometry and discussed with respect to diffusion process taking place at the interface of the system substrate-layer. The concentration profiles of Ag and Na confirmed exchange diffusion mechanism at 550°C by which silver moves quickly from the surface layer into glass substrate.
