Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
- Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach (Austria)
- IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz (Austria)
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the C{sub N} O{sub N} complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ∼0.8 eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.
- OSTI ID:
- 22486340
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors
Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACTIVATION ENERGY
ALUMINIUM NITRIDES
ANNIHILATION
CARBON
CONCENTRATION RATIO
DEFECTS
ELECTRON MOBILITY
EV RANGE
GALLIUM
GALLIUM NITRIDES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
NITROGEN COMPLEXES
PHOTOLUMINESCENCE
POSITRONS
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS
TRANSISTORS
TRAPPING
VACANCIES