Single gate p-n junctions in graphene-ferroelectric devices
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an “on-demand” p-n junction in graphene controlled by a single, universal backgate.
- OSTI ID:
- 22590678
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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