High efficiency diamond solar cells
- Downers Grove, IL
A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- The United States of America as represented by the United States Department of Energy (Washington, DC)
- Patent Number(s):
- 7,368,658
- Application Number:
- 10/697,048
- OSTI ID:
- 936327
- Country of Publication:
- United States
- Language:
- English
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