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Heat and mass transfer simulation of SiC boule growth by sublimation

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Abstract

An accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.

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Authors and Affiliations

  1. Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402, Saint Martin D’Hères, France

    Michel Pons, Jean-Marc Dedulle, Alexandre Pisch, Bernard Pelissier, Elisabeth Blanquet, Michail Anikin, Etienne Pernot, Roland Madar & Claude Bernard

  2. LETI, Commissariat à l’Energie Atomique, Grenoble Cedex 9, France

    Cecile Moulin, Christian Faure, Thierry Billon & Guy Feuillet

Authors
  1. Michel Pons
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  2. Cecile Moulin
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  3. Jean-Marc Dedulle
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  4. Alexandre Pisch
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  5. Bernard Pelissier
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  6. Elisabeth Blanquet
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  7. Michail Anikin
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  8. Etienne Pernot
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  9. Roland Madar
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  10. Claude Bernard
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  11. Christian Faure
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  12. Thierry Billon
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  13. Guy Feuillet
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Pons, M., Moulin, C., Dedulle, JM. et al. Heat and mass transfer simulation of SiC boule growth by sublimation. MRS Online Proceedings Library 640, 14 (2000). https://doi.org/10.1557/PROC-640-H1.4

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  • DOI: https://doi.org/10.1557/PROC-640-H1.4

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