UID:
almahu_9948025373502882
Format:
1 online resource (331 p.)
ISBN:
1-281-04981-6
,
9786611049812
,
0-08-054290-5
Series Statement:
Thin films ; v. 23
Content:
Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Note:
Description based upon print version of record.
,
Front Cover; Thin Films; Copyright Page; Contents; Contributors; Preface; Chapter 1. GexSi1- x Epitaxial Layer Growth and Application to Integrated Circuits; I. Introduction; II. Gex Si1-x Heterojunctions-General Considerations; III. Growth by Molecular Beam Epitaxy; IV. Growth by Chemical Vapor Deposition; V. Application to Heterojunction Bipolar Transistors; VI. The GexSi1-x Channel MOSFET; VII. Conclusions and Future Prospects; Acknowledgments; References; Chapter 2. Platinum Silicide Internal Emission Infrared Imaging Arrays; I. Introduction; II. The Internal Emission Process
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III. State of the Art of Platinum Silicide Detectors and ArraysIV. Future of Platinum Silicide Detector and Sensor Development; V. Summary; References; Chapter 3. Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals; I. Introduction; II. Infrared Bands, Detectors, and Materials; III. Group-IV Epitaxial Devices for Infrared Detectors; IV. Growth and Fabrication of Si-Based Infrared Detector Structures; V. Conclusion; References; Chapter 4. III-V Quantum-Well Structures for High-Speed Electronics; I. Background on Quantum-Well Infrared Detectors
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II. Quantum-Well Detector Design and Intersubband AbsorptionIII. MQW Detector Fabrication and DC Response Characteristics; IV. Electrical Bandwidth and Optical-Heterodyne Experiments; V. Applications; VI. Improvements in MQW Heterodyne Detectors; References; Chapter 5. Quantum-Well Devices for Infrared Emission; I. Introduction and Background; II. Quantum Wells in Interband-Type IR Sources; III. Intersubband Transition Processes for IR Emission; IV. Graded-Gap Injection Structures for MWIR and LWIR Emission; V. Recent Trends, Limitations, and Application Potential; References; VI. Appendix
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Author IndexSubject Index; Recent Volumes In this Series
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English
Additional Edition:
ISBN 0-12-533023-5
Language:
English
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