UID:
almahu_9948026601702882
Format:
1 online resource (279 p.)
ISBN:
1-281-04680-9
,
9786611046804
,
0-08-054295-6
Series Statement:
Thin films, v. 29
Content:
Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects. Volume 29
Note:
Description based upon print version of record.
,
Cover; Contents; Contributors; Preface; Chapter 1. Ultrathin Gate Dielectric Films for Si-Based Microelectronic Devices; 1.1. Introduction; 1.2. Requirements of Ultrathin Gate Dielectric Films; 1.3. Ultrathin Gate Dielectric Film Processing; 1.4. Characterization of Ultrathin Gate Dielectric Films; 1.5. Hydrogen and Ultrathin Gate Dielectric Films; 1.6. Silicon Oxide Gate Dielectric Films; 1.7. Silicon Oxynitride Gate Dielectric Films; 1.8. Alternative (High-k) Gate Dielectric Films; 1.9. Final Remarks; Acknowledgments; References
,
Chapter 2. Electrochemical Passivation of Si and SiGe Surfaces2.1. Introduction; 2.2. In Situ Characterization of Surface Bond Configurations and Electronic Surface States; 2.3. Electrochemically Hydrogenated Si Surfaces; 2.4. Hydrogenated Porous Silicon; 2.5. Thin Anodic Oxides on Si; 2.6. Thick Anodic Oxides on Si; 2.7. Enhanced Passivation of SiGe by Anodic Oxidation; Acknowledgments; References; Index; Recent Volumes In This Series
,
English
Additional Edition:
ISBN 0-12-533029-4
Language:
English
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