Format:
Online-Ressource (1 online resource (366 p.))
,
digital, PDF file(s).
Edition:
Online-Ausg.
ISBN:
9781139014960
Series Statement:
The Cambridge RF and Microwave Engineering Series
Content:
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Note:
Title from publishers bibliographic system (viewed on 18 Feb 2013)
Additional Edition:
ISBN 9780521762106
Additional Edition:
Erscheint auch als Druck-Ausgabe Nonlinear transistor model parameter extraction techniques Cambridge : Cambridge University Press, 2012 ISBN 9780521762106
Additional Edition:
ISBN 0521762103
Language:
English
Subjects:
Engineering
DOI:
10.1017/CBO9781139014960
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