Kooperativer Bibliotheksverbund

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Umfang: 1 Online-Ressource (1200 p) , ill

ISBN: 9783038260059 , 3038260053

Serie: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Inhalt: Volume is indexed by Thomson Reuters CPCI-S (WoS).The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from "Bulk growth" to "Device and application". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition. The 280 papers delivered during the September 2012 ECSCRM are arranged intoten sessions on bulk growth of silicon carbide, graphen growth, epitaxialgrowth 4H and 3C, characterization of material and point defects, interfacecharacterization, electrical and structural characterization, MOSprocessing, and device applications. Seven papers from Linkoping Universityreport on electrical characterization of PiN diodes with p+ layerselectivity grown by VLS transport, dry etching of nanopillars, the opticalproperties of a niobium center, the photoluminescence of 8H SiC, and surfacepreparation of off-axis 4H SiC.Other topics include morphology optimization of very thick epitaxial layers,nickel oxide as a dielectric for GaN and SiC devices, multi-wire electricaldischarge slicing, and the impact of AIN spacer thickness on electronmobility

Anmerkung: Includes bibliographical references and index , Mode of access: World Wide Web.

Sprache: Englisch

DOI: 10.4028/www.scientific.net/MSF.740-742

URL: Volltext  (Deutschlandweit zugänglich)

URL: Volltext  (Deutschlandweit zugänglich)

URL: Inhaltsverzeichnis

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Umfang: 1 online resource (1158 p.)

ISBN: 3-03826-005-3

Serie: Materials science forum ; volumes 740-742

Inhalt: The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2 , 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG

Anmerkung: Description based upon print version of record. , Silicon Carbide and Related Materials 2012; Preface, Sponsors and Committees; Table of Contents; Chapter 1: Bulk Growth; Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy; Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible; SiC Single Crystal Growth on Dual Seed with Different Surface Properties; Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth; Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates , Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C SolutionApplication of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth; Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent; Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC; Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers , On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT MethodAbsence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide; Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy; The Study of the Geometry and Growth Trend of Silicon Carbide Crystals; Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method; Growth of Large Diameter 4H-SiC by TSSG Technique; SiC Sublimation Growth at Small Spacing between Source and Seed , High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based MeltThe Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT; Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds; Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles; Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules; Sublimation Growth of Bulk AlN Crystals on SiC Seeds; Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds; AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates , Effect of a Gas Pressure on the Growth Rate of AlN LayerChapter 2: Graphen Growth and Characterization; Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001); X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD; Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation; Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment , A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates , English

Weitere Ausg.: ISBN 3-03785-624-6

Sprache: Englisch