UID:
almafu_9959245545302883
Umfang:
1 online resource (1409 p.)
Ausgabe:
3rd ed.
ISBN:
9786612955037
,
9781282955035
,
1282955039
,
9780123820372
,
0123820375
Inhalt:
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. It has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applicati
Anmerkung:
Description based upon print version of record.
,
Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
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2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References
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Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading
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Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor
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8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL)
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9.12. Power MOS Transistors
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English
Weitere Ausg.:
ISBN 9780123820365
Weitere Ausg.:
ISBN 0123820367
Sprache:
Englisch
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