UID:
almahu_9949199609102882
Umfang:
XI, 418 p. 133 illus.
,
online resource.
Ausgabe:
1st ed. 1969.
ISBN:
9781468488210
Serie:
Monographs in Semiconductor Physics ; 1
Inhalt:
Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Anmerkung:
1. Energy Spectrum of Electrons in Heavily Doped -- §1.1. Preliminary -- §1.2. Energy Spectrum of Electrons in a Doped Semiconductor (Low Doping Level) -- §1.3. Energy Spectrum of Electrons in a Doped Semiconductor (High Doping Level) -- 2. Statistical Physics of Carriers in Heavily Doped Semiconductors -- §2.1. Preliminary Remarks -- §2.2. Fermi - Dirac Statistics for Free Electrons -- §2.3. Statistics of Electrons and Holes in Semiconductors -- §2.4. Determination of the Fermi Level -- §2.5. Fermi Integrals -- 3. Transport Phenomena in Heavily Doped Semiconductors -- §3.1. Preliminary Remarks -- §3.2. Scattering Mechanisms -- §3.3. Electrical Conductivity and Hall Effect -- §3.4. Thermoelectric Phenomena and Thermal Conductivity -- §3.5. Thermomagnetic Effects -- §3.6. Magnetoresistance of Semiconductors -- §3.7. Characteristic Features of Transport Phenomena in AIIIBV Semiconductors -- 4. Optical Properties of Heavily Doped Semiconductors -- §4.1. Absorption of Light -- §4.2. Reflection of Light -- §4.3. Faraday Effect -- 5. Behavior of Impurities in Heavily Doped Semiconductors -- §5.1. Preliminary Remarks -- §5.2. Experimental Investigations of Impurity Behavior in Heavily Doped Semiconductors -- 6. Preparation of Heavily Doped Semiconductors -- §6.1. Stability of a Smooth Crystallization Front -- §6.2. Some Features of Impurity Distribution in Heavily Doped Semiconductors -- §6.3. Structure of Heavily Doped Semiconductors -- §6.4. Preparation of Heavily Doped Single Crystals -- 7. Some Applications of Heavily Doped Semiconductors -- §7.1. Tunnel Diodes -- §7.2. Semiconductor Lasers -- §7.3. Thermoelectric Devices -- §7.4. Hall Probes and Magnetoresistors Stable under Nuclear Radiation -- §7.5. Strain Gauges -- Appendices -- A.2. Table of Fermi Integrals with Integral Indices -- A.3. Table of Fermi Integrals with Fractional Indices in the Range 0 ? ?* ? 20 -- A.4. Table of Fermi Integrals with Fractional Indices in the Range ? 4 ? ?* ? 0 -- A.8. Table of Values of the Hall Factor -- Literature.
In:
Springer Nature eBook
Weitere Ausg.:
Printed edition: ISBN 9781468488234
Weitere Ausg.:
Printed edition: ISBN 9781468488227
Weitere Ausg.:
Printed edition: ISBN 9780306303524
Sprache:
Englisch
DOI:
10.1007/978-1-4684-8821-0
URL:
https://doi.org/10.1007/978-1-4684-8821-0
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