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  • 1
    Online Resource
    Online Resource
    Cambridge : Cambridge University Press
    UID:
    gbv_88340320X
    Format: Online-Ressource (1 online resource (208 p.)) , digital, PDF file(s).
    Edition: Online-Ausg.
    ISBN: 9780511676208
    Content: If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research
    Content: Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin
    Note: Title from publisher's bibliographic system (viewed on 05 Oct 2015)
    Additional Edition: ISBN 9780521449649
    Additional Edition: Erscheint auch als Druck-Ausgabe Tang, Denny D. Magnetic memory Cambridge [u.a.] : Cambridge University Press, 2010 ISBN 0521449642
    Additional Edition: ISBN 9780521449649
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9780521449649
    Language: English
    Keywords: Magnetspeicher
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    Cambridge :Cambridge University Press,
    UID:
    almahu_9948233942002882
    Format: 1 online resource (x, 196 pages) : , digital, PDF file(s).
    ISBN: 9780511676208 (ebook)
    Content: If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
    Note: Title from publisher's bibliographic system (viewed on 05 Oct 2015). , Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin.
    Additional Edition: Print version: ISBN 9780521449649
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    Online Resource
    Online Resource
    New York :Cambridge University Press,
    UID:
    almafu_9960119854902883
    Format: 1 online resource (x, 196 pages) : , digital, PDF file(s).
    ISBN: 1-107-20583-2 , 0-511-84992-3 , 1-282-53604-4 , 9786612536045 , 0-511-67831-2 , 0-511-68154-2 , 0-511-67705-7 , 0-511-68352-9 , 0-511-68477-0 , 0-511-67620-4 , 0-511-67956-4
    Content: If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
    Note: Title from publisher's bibliographic system (viewed on 05 Oct 2015). , Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin. , English
    Additional Edition: ISBN 0-521-44964-2
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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