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  • 1
    Online Resource
    Online Resource
    Cambridge :Cambridge University Press,
    UID:
    almafu_9960119847502883
    Format: 1 online resource (xiv, 417 pages) : , digital, PDF file(s).
    ISBN: 0-511-52524-9
    Series Statement: Cambridge solid state science series
    Content: This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general.
    Note: Title from publisher's bibliographic system (viewed on 05 Oct 2015). , 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology. , English
    Additional Edition: ISBN 0-521-01934-6
    Additional Edition: ISBN 0-521-37156-2
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    Cambridge : Cambridge University Press
    UID:
    gbv_883359707
    Format: Online-Ressource (1 online resource (432 p.)) , digital, PDF file(s).
    Edition: Online-Ausg.
    ISBN: 9780511525247
    Series Statement: Cambridge Solid State Science Series
    Content: This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general
    Content: 1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology
    Note: Title from publisher's bibliographic system (viewed on 05 Oct 2015)
    Additional Edition: ISBN 9780521371568
    Additional Edition: ISBN 9780521019347
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 978-052-137-156-8
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9780521371568
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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