Format:
Online-Ressource (1 online resource (620 p.))
,
digital, PDF file(s).
Edition:
Online-Ausg.
ISBN:
9780511470769
Content:
This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.
Note:
Title from publishers bibliographic system (viewed on 18 Feb 2013)
Additional Edition:
ISBN 9780521361224
Additional Edition:
Erscheint auch als Druck-Ausgabe Landsberg, Peter T., 1922 - 2010 Recombination in semiconductors Cambridge [u.a.] : Cambridge Univ. Press, 1991 ISBN 0521361222
Language:
English
Subjects:
Physics
Keywords:
Halbleiter
;
Rekombination
DOI:
10.1017/CBO9780511470769
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