UID:
almahu_9948601744002882
Umfang:
1 online resource (various pagings) :
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illustrations (some color).
ISBN:
9780750325165
,
9780750325158
Serie:
IOP ebooks. [2020 collection]
Inhalt:
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.
Anmerkung:
"Version: 20200901"--Title page verso.
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part I. Gallium oxide. 1. Low-dimensional [beta]-Ga2O3 semiconductor devices / Suhyun Kim, Jinho Bae, Janghyuk Kim and Jihyun Kim -- 2. [beta]-Ga2O3 power field-effect transistors / Hang Dong, Guangwei Xu, Xuanze Zhou, Wenhao Xiong, Xueqiang Xiang, Weibing Hao, Shibing Long and Ming Liu -- 3. Beta gallium oxide ([beta]-Ga2O3) nanomechanical transducers : fundamentals, devices, and applications / Xu-Qian Zheng and Philip X.-L. Feng -- 4. Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy / Mahitosh Biswas and Elaheh Ahmadi -- 5. Defects and carrier lifetimes in Ga2O3 / E.B. Yakimov and A.Y. Polyakov -- 6. Breakdown in Ga2O3 rectifiers--the role of edge termination and impact ionization / Yu-Te Liao, Minghan Xian, Randy Elhassani, Patrick Carey IV, Chaker Fares, Fan Ren, Marko Tadjer and S.J. Pearton -- 7. Radiation damage in Ga2O3 materials and devices / S.J. Pearton, Fan Ren, Jihyun Kim, Michael Stavola and Alexander Y. Polyakov -- 8. Optical properties of Ga2O3 nanostructures / Manuel Alonso-Orts, Emilio Nogales and Bianchi Méndez -- 9. Band alignment of various dielectrics on Ga2O3, (AlxGa1-x)2O3, and (InxGa1-x)2O3 / C. Fares, F. Ren, Max Kneiss, Holger von Wenckstern, Marius Grundmann and S.J. Pearton
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part II. Gallium nitride/aluminum nitride. 10. The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors : theory, modeling, and experiments / Indraneel Sanyal and Jen-Inn Chyi -- 11. High Al-content AlGaN-based HEMTs / Albert G. Baca, B.A. Klein, A.M. Armstrong, A.A. Allerman, E.A. Douglas and R.J. Kaplar -- 12. Understanding interfaces for homoepitaxial GaN growth / Jennifer Hite and Michael A. Mastro -- 13. Gas sensors based on wide bandgap semiconductors / Kwang Hyeon Baik and Soohwan Jang -- 14. Modeling of AlGaN/GaN pH sensors / Madeline Esposito, Erin Patrick and Mark E. Law -- 15. The potential and challenges of in situ microscopy of electronic devices and materials / Zahabul Islam, Nicholas Glavin and Aman Haque -- 16. Vertical GaN-on-GaN power devices / Houqiang Fu, Kai Fu and Yuji Zhao -- 17. Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection / Yu-Lin Wang and Chang-Run Wu -- 18. Irradiation effects on high aluminum content AlGaN channel devices / Patrick Carey, Fan Ren, Jinho Bae, Jihyun Kim and Stephen Pearton
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part III. Zinc oxide. 19. BeMgZnO wide bandgap quaternary alloy semiconductor / Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür and Hadis Morkoç -- part IV. Boron nitride. 20. Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells / Q.W Wang, J. Li, J.Y. Lin and H.X. Jiang -- part V. Diamond. 21. Recent advances in SiC/diamond composite devices / Debarati Mukherjee, Miguel Neto, Filipe J. Oliveira, Rui F. Silva, Luiz Pereira, Shlomo Rotter and Joana C. Mendes.
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Also available in print.
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Mode of access: World Wide Web.
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System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.
Weitere Ausg.:
Print version: ISBN 9780750325141
Weitere Ausg.:
ISBN 9780750325172
Sprache:
Englisch
DOI:
10.1088/978-0-7503-2516-5
URL:
https://iopscience.iop.org/book/978-0-7503-2516-5
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