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  • 1
    UID:
    almafu_9959328813202883
    Format: 1 online resource
    Edition: 1.
    ISBN: 9781119246305 , 111924630X , 9781119246282 , 1119246288 , 9781119246312 , 1119246318
    Content: "This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--
    Additional Edition: Print version: Kumar, Mamidala Jagadesh. Tunnel field-effect transistors (TFET). Hoboken : Wiley, 2016 ISBN 9781119246299
    Language: English
    Keywords: Electronic books. ; Electronic books. ; Electronic books.
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    UID:
    b3kat_BV043831047
    Format: 1 Online-Ressource
    ISBN: 9781119246305 , 111924630X , 9781119246312 , 1119246318
    Content: "This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--
    Note: Includes bibliographical references and index
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 978-1-119-24629-9
    Language: English
    Keywords: T-FET
    URL: Volltext  (URL des Erstveröffentlichers)
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    UID:
    almahu_9948326583702882
    Format: 1 online resource (208 pages) : , illustrations
    ISBN: 9781119246305 (e-book)
    Content: "This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--
    Additional Edition: Print version: Kumar, Mamidala Jagadesh. Tunnel field-effect transistors (TFET) : modelling and simulations. Hoboken : Wiley, 2017 ISBN 9781119246299
    Language: English
    Keywords: Electronic books.
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
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