UID:
kobvindex_HPB862121374
Format:
1 online resource (xix, 288 pages) :
,
illustrations
ISBN:
1466500557
,
9781466500556
,
9781466503472
,
1466503475
,
1138075604
,
9781138075603
Content:
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"--
Note:
1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions.
Additional Edition:
Print version: Maiti, C.K. Strain-engineered MOSFETs. Boca Raton : Taylor & Francis, ©2013 ISBN 9781466500556
Language:
English
DOI:
10.1201/9781315216577
URL:
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