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  • 1
    Online-Ressource
    Online-Ressource
    Boca Raton, Florida :CRC Press, Taylor & Francis Group,
    UID:
    almafu_9959028573202883
    Umfang: 1 online resource (537 p.)
    Ausgabe: 1st edition
    ISBN: 9781351831079 , 1351831070 , 9781315215181 , 1315215187 , 9781482240672 , 148224067X
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.
    Anmerkung: Description based upon print version of record. , 1. Introduction to compact models -- 2. Review of basic device physics -- 3. Metal-oxide-semiconductor system -- 4. Large geometry MOSFET compact models -- 5. Compact models for small geometry MOSFETs -- 6. MOSFET capacitance models -- 7. Compact MOSFET models for RF applications -- 8. Modeling process variability in scaled MOSFETs -- 9. Compact models for ultrathin body FETs -- 10. Beyond-CMOS transistor models : tunnel FETs -- 11. Bipolar junction transistor compact models -- 12. Compact model library for circuit simulation. , English
    Weitere Ausg.: ISBN 9781138827400
    Weitere Ausg.: ISBN 1138827401
    Weitere Ausg.: ISBN 9781482240665
    Weitere Ausg.: ISBN 1482240661
    Sprache: Englisch
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Online-Ressource
    Online-Ressource
    Boca Raton, FL : CRC Press | Berlin : Knowledge Unlatched
    UID:
    gbv_1663283346
    Umfang: 1 Online-Ressource (xix, 527 Seiten)
    Inhalt: 1. Introduction to compact models -- 2. Review of basic device physics -- 3. Metal-oxide-semiconductor system -- 4. Large geometry MOSFET compact models -- 5. Compact models for small geometry MOSFETs -- 6. MOSFET capacitance models -- 7. Compact MOSFET models for RF applications -- 8. Modeling process variability in scaled MOSFETs -- 9. Compact models for ultrathin body FETs -- 10. Beyond-CMOS transistor models : tunnel FETs -- 11. Bipolar junction transistor compact models -- 12. Compact model library for circuit simulation
    Anmerkung: Includes bibliographical references (pages 477-514) and index
    Weitere Ausg.: ISBN 9781482240665
    Sprache: Englisch
    URL: Volltext  (kostenfrei)
    URL: OAPEN
    URL: Image  (Thumbnail cover image)
    URL: OAPEN  (Access full text online)
    URL: OAPEN  (Access full text online)
    URL: OAPEN  (Creative Commons License)
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    Boca Raton, FL : CRC Press, Taylor & Francis Group,
    UID:
    gbv_1780091516
    Umfang: 1 online resource (xix, 527 pages)
    ISBN: 148224067X , 9781482240672 , 9781482240665 , 1482240661
    Inhalt: 1. Introduction to compact models -- 2. Review of basic device physics -- 3. Metal-oxide-semiconductor system -- 4. Large geometry MOSFET compact models -- 5. Compact models for small geometry MOSFETs -- 6. MOSFET capacitance models -- 7. Compact MOSFET models for RF applications -- 8. Modeling process variability in scaled MOSFETs -- 9. Compact models for ultrathin body FETs -- 10. Beyond-CMOS transistor models : tunnel FETs -- 11. Bipolar junction transistor compact models -- 12. Compact model library for circuit simulation.
    Anmerkung: Includes bibliographical references
    Weitere Ausg.: Erscheint auch als Druck-Ausgabe ISBN 9781482240665
    Sprache: Englisch
    Schlagwort(e): Electronic books
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Online-Ressource
    Online-Ressource
    Milton :Taylor & Francis Group,
    UID:
    almahu_9949516183602882
    Umfang: 1 online resource (548 pages)
    ISBN: 9781482240672
    Weitere Ausg.: Print version: Saha, Samar K. Compact Models for Integrated Circuit Design Milton : Taylor & Francis Group,c2015 ISBN 9781482240665
    Sprache: Englisch
    Schlagwort(e): Electronic books.
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Online-Ressource
    Online-Ressource
    Taylor and Francis
    UID:
    b3kat_BV046929126
    Umfang: 1 Online-Ressource
    ISBN: 9781482240665
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts
    Sprache: Englisch
    URL: Volltext  (kostenfrei)
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    [Erscheinungsort nicht ermittelbar] : Taylor & Francis
    UID:
    gbv_1778634370
    Umfang: 1 Online-Ressource
    ISBN: 9781482240665
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts
    Anmerkung: English
    Sprache: Englisch
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Online-Ressource
    Online-Ressource
    Boca Raton, Florida :CRC Press, Taylor & Francis Group,
    UID:
    edoccha_9959028573202883
    Umfang: 1 online resource (537 p.)
    Ausgabe: 1st edition
    ISBN: 1-351-83107-0 , 1-315-21518-7 , 1-4822-4067-X
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.
    Anmerkung: Description based upon print version of record. , 1. Introduction to compact models -- 2. Review of basic device physics -- 3. Metal-oxide-semiconductor system -- 4. Large geometry MOSFET compact models -- 5. Compact models for small geometry MOSFETs -- 6. MOSFET capacitance models -- 7. Compact MOSFET models for RF applications -- 8. Modeling process variability in scaled MOSFETs -- 9. Compact models for ultrathin body FETs -- 10. Beyond-CMOS transistor models : tunnel FETs -- 11. Bipolar junction transistor compact models -- 12. Compact model library for circuit simulation. , English
    Weitere Ausg.: ISBN 1-138-82740-1
    Weitere Ausg.: ISBN 1-4822-4066-1
    Sprache: Englisch
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 8
    Online-Ressource
    Online-Ressource
    CRC Press
    UID:
    kobvindex_HPB1159386681
    Umfang: 1 online resource
    ISBN: 9781482240665 , 1482240661
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.
    Anmerkung: English.
    Sprache: Englisch
    URL: OAPEN  (Access full text online)
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Online-Ressource
    Online-Ressource
    Abingdon, UK :CRC Press,
    UID:
    almahu_9949550353502882
    Umfang: 1 online resource (549 p.)
    ISBN: 9781482240665
    Inhalt: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.
    Sprache: Englisch
    Schlagwort(e): Electronic books.
    URL: Image  (Thumbnail cover image)
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
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