UID:
edocfu_9959241846502883
Format:
1 online resource (228 p.)
Edition:
1st ed.
ISBN:
1-5231-0461-9
,
1-5015-0153-4
,
1-5015-0155-0
Content:
The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies. The scope of the conference includes the following topics: A. Green Electronics B. Microelectronic Circuits and Systems C. Integrated Circuits and Packaging Technologies D. Computer and Communication Engineering E. Electron Devices F. Optoelectronic and Semiconductor Technologies The technical program consisted of 4 plenary talks, 23 invited talks, and more than 250 contributed oral and poster presentations. Plenary speakers were recognized experts in their fields, and their talks focused on leading-edge technologies including: "The Future Lithographic Technology for Semiconductor Fabrication" by Dr. Alek C. Chen, Asia ASML, Taiwan. "Detection of Single Traps and Characterization of Individual Traps: Beginning of Atomistic Reliability Physics" by Prof. Toshiaki Tsuchiya, Shimane University, Japan. "The Art and Science of Packaging High-Coupling Photonics Devices and Modules", by Prof. Wood-Hi Cheng, National Chung-Hsing University, Taiwan. "Prospect and Outlook of Electrostatic Discharge (ESD) Protection in Emerging Technologies", by Prof. Juin J. Liou, University of Central Florida, USA. After a rigorous review process, the ISNE 2015 technical program committee has selected 10 outstanding presentations and invited the authors to prepare extended chapters for inclusion in this edited book. Of the 10 chapters, five are focused on the subject of electronic devices, and the other covers the circuit designs for various applications. The authors are working at the academia in Austria, United States, Korea, and Taiwan. The guest editors would like to take this opportunity to express our sincere gratitude to all the members of the ISNE 2015 technical program committees for reviewing the papers and selecting the manuscripts for the edited book. We also thank all the authors for their valuable and excellent contributions to the book.
Note:
Description based upon print version of record.
,
Front matter --
,
Editorial/Foreword --
,
Contents --
,
Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs --
,
Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation --
,
Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory --
,
Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices --
,
A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory --
,
On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System --
,
A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications --
,
A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission --
,
Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices --
,
Impact-Based Area Allocation for Yield Optimization in Integrated Circuits --
,
Editors --
,
List of authors
,
English
Additional Edition:
ISBN 1-5015-1050-9
Language:
English
DOI:
10.1515/9781501501531
Bookmarklink
