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Format: 1 Online-Ressource (XIV, 323 Seiten)

ISBN: 9783031084584

Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 978-3-031-08457-7

Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 978-3-031-08459-1

Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 978-3-031-08460-7

Language: English

Subjects: Physics

DOI: 10.1007/978-3-031-08458-4

URL: Volltext  (URL des Erstveröffentlichers)

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Format: XIV, 323 p. 93 illus. , online resource.

Edition: 1st ed. 2022.

ISBN: 9783031084584

Content: This classroom-tested textbook provides a self-contained one-semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson's equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate.

Note: Chapter 1. Principles of Quantum Mechanics -- Chapter 2. Crystal Structure of Solids -- Chapter 3. Equilibrium Statistical Mechanics -- Chapter 4. Band Theory of Solids -- Chapter 5. Semiconductors in Equilibrium -- Chapter 6. Carrier concentration and electric potential -- Chapter 7. Generation-Recombination Processes -- Chapter 8. Carrier Transport -- Chapter 9. Metal-Semiconductor Contact -- Chapter 10. Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) -- Chapter 11. PN Junction Diode -- Chapter 12. Optoelectronic Devices.

In: Springer Nature eBook

Additional Edition: Printed edition: ISBN 9783031084577

Additional Edition: Printed edition: ISBN 9783031084591

Additional Edition: Printed edition: ISBN 9783031084607

Language: English

DOI: 10.1007/978-3-031-08458-4

URL: https://doi.org/10.1007/978-3-031-08458-4

UID:

Format: 1 online resource (325 pages)

ISBN: 9783031084584

Note: Intro -- Preface -- Contents -- Part I Fundamental Physics -- 1 Principles of Quantum Mechanics -- 1.1 Why Quantum Mechanics? -- 1.2 Wave-Particle Duality -- 1.3 Wavelength of a Free Particle in Terms of Its Energy -- 1.4 Energy Quantization -- 1.5 Radiation Spectrum of Hydrogen -- 1.6 The Wave Function -- 1.7 The Wave Function of a Free Particle -- 1.8 Schrödinger's Equation -- 1.8.1 Time-Dependent Schrödinger's Equation -- 1.8.2 Time-Independent Schrödinger's Equation -- 1.9 Probabilistic Interpretation and the Collapse of the Wave Function -- 1.10 Measurable and Unmeasurable in Quantum Mechanics -- 1.11 Electron States in a Hydrogen Atom -- 1.12 Spin -- 1.13 Degeneracy -- 1.14 Indistinguishability of Quantum Particles -- 1.15 Spin-Statistics Theorem -- 1.16 Pauli's Exclusion Principle -- 1.17 Problems -- 1.17.1 Solved Problems -- 1.17.2 Practice Problems -- 1.17.3 Solutions -- 2 Crystal Structure of Solids -- 2.1 Periodic Table of Elements -- 2.2 Chemical Bonding -- 2.3 Crystal Lattices -- 2.3.1 Atomic Order in Solids -- 2.3.2 Bravais Lattices -- 2.3.3 Unit Cell, Primitive Cell, and Crystal Basis -- 2.3.4 Volume Density and Atomic Packing Fraction -- 2.4 Basic Cubic Structures -- 2.5 Formation of Diamond Structure -- 2.6 Miller Indices -- 2.6.1 Determination of Miller Indices -- 2.6.2 Miller Indices for Cubic Structures -- 2.7 Imperfections and Impurities in Solids -- 2.8 Problems -- 2.8.1 Solved Problems -- 2.8.2 Practice Problems -- 2.8.3 Solutions -- 3 Equilibrium Statistical Mechanics -- 3.1 Microstates and Macrostates -- 3.2 Thermal Equilibrium -- 3.3 Postulate of Equal A Priori Probabilities -- 3.4 Grand Canonical Distribution -- 3.5 Fermi-Dirac Distribution -- 3.6 Boltzmann Approximation -- 3.7 Fermi Energy at Low Temperatures -- 3.8 Problems -- 3.8.1 Solved Problems -- 3.8.2 Practice Problems -- 3.8.3 Solutions. , 4 Band Theory of Solids -- 4.1 Bloch's Theorem -- 4.2 Energy Bands -- 4.2.1 Physical Origin of the Energy Bands -- 4.2.2 The First Brillouin Zone -- Brillouin Zones -- One-Dimensional Crystal -- Band Gap -- The Energy-Momentum Diagrams in Three Dimensions -- Quasimomentum -- 4.2.3 Phase Velocity vs. Group Velocity -- Phase Velocity -- Group Velocity -- 4.2.4 Bloch Oscillations -- 4.3 Conduction Types of Solids -- 4.3.1 Band Filling and Electrical Conductivity -- 4.3.2 Metals and Semimetals -- 4.3.3 Dielectrics and Semiconductors -- 4.4 Conduction and Valence Bands -- 4.5 Holes -- 4.6 Effective Mass Tensor -- 4.7 Problems -- 4.7.1 Solved Problems -- 4.7.2 Practice Problems -- 4.7.3 Solutions -- Part II Semiconductors in and out of Equilibrium -- 5 Semiconductors in Equilibrium -- 5.1 Density of States -- 5.2 Equilibrium Carrier Concentration -- 5.3 Energy Probability Distribution -- 5.4 Density of States Effective Mass vs. Conductivity Effective Mass -- 5.4.1 Density of States Effective Mass -- 5.4.2 Conductivity Effective Mass -- Electrons -- Holes -- 5.4.3 Thermal Velocity -- 5.5 Intrinsic Semiconductors -- 5.6 Doping and Extrinsic Semiconductors -- 5.7 Impurity Energy Levels -- 5.8 Statistics of Donors and Acceptors -- 5.9 Mass Action Law -- 5.10 Charge Neutrality Equation -- 5.11 Ionization Regimes -- 5.11.1 Complete Ionization -- 5.11.2 Intrinsic Regime -- 5.11.3 Carrier Concentration in a Semiconductor with One Type of Doping at Not Too High Temperatures -- 5.11.4 Electron Freeze-Out Regime -- 5.12 Numerical Determination of Fermi Energy and Carrier Concentrations -- 5.13 Problems -- 5.13.1 Solved Problems -- 5.13.2 Practice Problems -- 5.13.3 Solutions -- 6 Carrier Concentration and Electric Potential -- 6.1 Electron and Hole Concentrations in a Non-uniform Electric Potential -- 6.2 Poisson's Equation. , 6.3 Approximate Solution of Poisson's Equation -- 6.3.1 Problem Formulation -- 6.3.2 Debye Screening -- 6.3.3 Depletion Approximation -- 6.3.4 Validity Range of the Depletion Approximation -- 6.4 Band Diagrams and Band Bending -- 6.5 Electric Potential in a Semiconductor from Poisson's Equation -- 6.5.1 Exact Solution of Poisson's Equation -- 6.5.2 Numerical Results -- 6.6 Problems -- 6.6.1 Solved Problems -- 6.6.2 Practice Problems -- 6.6.3 Solutions -- 7 Generation-Recombination Processes -- 7.1 Recombination Mechanisms -- 7.2 Charge Carrier Dynamics -- 7.2.1 Generation and Recombination Rates -- 7.2.2 Recombination Time Approximation -- 7.3 Radiative Recombination -- 7.4 Auger Recombination -- 7.5 Shockley-Read-Hall (SRH) Recombination -- 7.5.1 Electron and Hole Capture and Emission by the Traps -- 7.5.2 The Principle of Detailed Balance -- 7.5.3 The Net SRH Recombination Rate -- 7.5.4 SRH Recombination Time -- 7.6 Surface Recombination -- 7.7 Quasi-Fermi Energies -- 7.8 Problems -- 7.8.1 Solved Problems -- 7.8.2 Practice Problems -- 7.8.3 Solutions -- 8 Carrier Transport -- 8.1 Flux and Electric Current Density -- 8.2 Diffusion Current -- 8.3 Drift Current -- 8.4 Conductivity and Resistivity -- 8.5 Current-Voltage Measurements -- 8.5.1 Photoconductivity -- 8.5.2 Hall Effect -- 8.6 Temperature and Doping Level Dependence of Mobility -- 8.7 Einstein's Relation -- 8.8 Continuity Equation -- 8.9 Problems -- 8.9.1 Solved Problems -- 8.9.2 Practice Problems -- 8.9.3 Solutions -- Part III Semiconductor Devices -- 9 Metal-Semiconductor Contact -- 9.1 Reasons to Study -- 9.2 Energy Band Diagram -- 9.3 SCR Capacitance -- 9.4 Ohmic Contact -- 9.5 Rectification in a Metal-Semiconductor Contact -- 9.5.1 Metal/n-Type Semiconductor Junction -- Qualitative Considerations -- 9.5.2 Reverse Saturation Current Density of a Schottky Diode. , 9.5.3 Metal/p-Type Semiconductor Junction -- 9.6 Non-ideality Effects -- 9.7 Problems -- 9.7.1 Solved Problems -- 9.7.2 Practice Problems -- 9.7.3 Solutions -- 10 Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) -- 10.1 MOSFET Schematics and Operation Principle -- 10.2 Qualitative Description of MOSFET I-V Curve -- 10.3 Quantitative Description of a MOSFET I-V Curve -- 10.4 Determination of the Threshold Voltage -- 10.4.1 Energy Band Diagram of a MOS Structure at Zero Gate Voltage -- 10.4.2 Energy Band Diagram of a MOS Structure for Non-zero Gate Voltage -- 10.4.3 Oxide Voltage -- 10.4.4 Flat-Band Voltage -- 10.4.5 Threshold Voltage -- 10.5 Capacitance-Voltage Measurements -- 10.6 Problems -- 10.6.1 Solved Problems -- 10.6.2 Practice Problems -- 10.6.3 Solutions -- 11 PN Junction Diode -- 11.1 The Structure of a pn Junction -- 11.2 The Energy Band Diagram of a pn Junction at Zero Bias -- 11.3 PN Junction Under an External Bias -- 11.4 SCR Capacitance -- 11.5 Current-Voltage Relation of a pn Junction Diode -- 11.5.1 Charge Carrier Concentrations Near the Boundaries of the SCR -- 11.5.2 Current-Voltage Relation of an Ideal pn Junction Diode -- 11.5.3 Current Densities in a pn Diode -- 11.5.4 SCR Recombination Current -- 11.6 Problems -- 11.6.1 Solved Problems -- 11.6.2 Practice Problems -- 11.6.3 Solutions -- 12 Optoelectronic Devices -- 12.1 Solar Cells (SCs) -- 12.1.1 SC Operation -- 12.1.2 Spectral Irradiance (Spectral Intensity) -- 12.1.3 Light Absorption -- 12.1.4 SC Current-Voltage Relation -- 12.2 Light-Emitting Diodes (LEDs) -- 12.2.1 LED Operation -- 12.2.2 LED Spectrum -- 12.2.3 LED Efficiency -- 12.2.4 Increasing the LED Efficiency -- 12.3 Semiconductor Lasers -- 12.3.1 Stimulated Emission and Einstein's Coefficients -- 12.3.2 Generation of Light -- 12.3.3 Semiconductor Laser Operation -- The Structure of a Semiconductor Laser. , Threshold Current -- Laser Spectrum -- 12.4 Problems -- 12.4.1 Solved Problems -- 12.4.2 Practice Problems -- 12.4.3 Solutions -- Appendices -- A.1 A Crash Course in Complex Numbers -- A.2 Proof of Bloch's Theorem -- A.3 Properties of Si, Ge, and GaAs -- A.4 Evaluation of Exponential Integrals -- A.5 Planck's Radiation Law -- Index.

Additional Edition: Print version: Evstigneev, Mykhaylo Introduction to Semiconductor Physics and Devices Cham : Springer International Publishing AG,c2022 ISBN 9783031084577

Language: English