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Umfang: XIII, 286 p. 141 illus., 109 illus. in color. , online resource.

Ausgabe: 1st ed. 2022.

ISBN: 9783031103148

Inhalt: This textbook teaches the physics and technology of semiconductors, highlighting the strong interdependence between the engineering principles and underlying physical fundamentals. It focuses on conveying a basic understanding of the physics, materials, and processes involved in semiconductor technology without relying on detailed derivations. The book features separate comments on the key physical principles covered, allowing the reader to quickly grasp the take-home message. Chapter-end questions and answers round out this compact book, making it a helpful and dependable resource for physicists, electrical engineers, and materials scientists working with electronic materials. Aimed at upper-level undergraduate students and written by an author with extensive experience in both industry and academia, this textbook gives physicists the opportunity to learn about the materials and technology behind semiconductors, while providing engineers and materials scientists a deeper understanding of the physics behind the technology.

Anmerkung: Crystal Structure and Energy Bands -- Transport of Charge Carriers -- Donors and Acceptors -- Carrier Statistics -- Fabrication of Electronic Si -- Lattice Defects -- Compound Semiconductors -- Amorphous Semiconductors.

In: Springer Nature eBook

Weitere Ausg.: Printed edition: ISBN 9783031103131

Weitere Ausg.: Printed edition: ISBN 9783031103155

Weitere Ausg.: Printed edition: ISBN 9783031103162

Sprache: Englisch

DOI: 10.1007/978-3-031-10314-8

URL: https://doi.org/10.1007/978-3-031-10314-8

URL: Volltext  (URL des Erstveröffentlichers)

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Umfang: 1 online resource (286 pages)

ISBN: 9783031103148

Anmerkung: Includes index. , Intro -- Preface -- Contents -- About the Author -- Part I Semiconductor Materials: Structure, Processes, Fabrication -- 1 Crystal Structure and Energy Bands -- 1.1 The Lattice Structure -- 1.2 Energy Bands -- 1.3 Metals and Insulators -- 1.4 Electrons and Holes -- 1.5 The Origin of Energy Bands according to the Schroedinger Equation -- 1.6 Band Structure -- 1.7 Direct and Indirect Semiconductors -- 1.8 Basic Properties of a Semiconductor Material to Be Taken from the Band Structure -- 1.9 Questions and Answers -- 2 Transport of Charge Carriers -- 2.1 Ohm's Law -- 2.2 Mobility and Hall Effect -- 2.3 Factors Determining the Mobility of Charge Carriers -- 2.4 Saturation Velocity -- 2.5 Mobility and Frequency Limit of Devices -- References -- 3 Donors and Acceptors -- 3.1 Creation of Free Electrons and Holes by Thermal Excitation -- 3.2 Doping of Si -- 3.3 The Hydrogen Model of Donors and Acceptors -- 3.4 Shallow Donors and Acceptors in Compound Semiconductors -- 3.5 Isoelectronic Impurities -- 3.6 Questions and Answers -- 4 Carrier Statistics -- 4.1 Density of States -- 4.2 Free Carrier Concentration in Thermal Equilibrium -- 4.3 The Law of Mass Action -- 4.4 The Intrinsic Case -- 4.5 Semi-insulating Semiconductors -- 4.6 The Temperature Dependence of Carrier Concentration. Why Si-Electronics Does not Work at Elevated Temperatures -- 4.7 Questions and Answers -- 5 Fabrication of Electronic Silicon -- 5.1 Silicon Valley, Si-Technology, and Si-Age -- 5.2 The Siemens Process -- 5.3 Crystal Growth of Silicon -- 5.4 The Float Zone Process as a Purification Method -- 5.5 Wafering -- 5.6 Electronic Silicon, a Material of Extreme Purity and Crystalline Perfection -- 5.7 Questions and Answers -- 6 Lattice Defects -- 6.1 Intrinsic and Extrinsic Defects -- 6.2 Point Defects -- 6.3 Line Defects (Dislocations). , 6.4 The Role of Dislocations in Electronic Materials -- 6.5 Two-Dimensional Defects -- 6.6 Three-Dimensional Defects -- 6.7 Questions and Answers -- References -- 7 Compound Semiconductors -- 7.1 Introduction, Some History -- 7.2 The Potential of III-V-Compounds -- 7.3 Growth of GaAs and InP by the LEC and VGF Process -- 7.4 "New" Compound Semiconductors: SiC, AlN, and GaN -- 7.5 Epitaxy -- 7.6 Questions and Answers -- References -- 8 Amorphous Semiconductors -- 8.1 Short-Range Order and Band Structure -- 8.2 On the Distinction Between Direct and Indirect Semiconductors in Amorphous Semiconductors -- 8.3 Variable Range Hopping Conduction -- 8.4 The Problem of Doping in a-Si -- 8.5 Applications of a-Si:H -- 8.6 Questions and Answers -- References -- Part II Devices -- 9 The pn-Junction -- 9.1 pn-Junction Without External Voltage -- 9.2 pn-Junction with External Voltage -- 9.3 Breakthrough Voltage -- 9.4 Thickness of Depletion Layers -- 9.5 Questions and Answers -- 10 Solar Cells -- 10.1 The Sun, a Gigantic Energy Source -- 10.2 The Solar Cell, a pn-Junction Device -- 10.3 Operating Principle of the Solar Cell in Detail -- 10.4 The Optimum Bandgap for a Solar Cell Material -- 10.5 Thin Film Solar Cells -- 10.6 Cheaper Silicon for Photovoltaics -- 10.7 Questions and Answers -- References -- 11 Light Emitting Diodes (LEDs) -- 11.1 The Light Emitting Process in Semiconductors -- 11.2 The Linewidth of LEDs -- 11.3 Radiative and Nonradiative Processes -- 11.4 External and Internal Quantum Efficiency -- 11.5 LEDs for All Colors -- 11.6 The Story of the Blue LED -- 11.7 White LEDs -- 11.8 UV LEDs -- 11.9 Brightness of LEDs -- 11.10 Questions and Answers -- References -- 12 Semiconductor Lasers -- 12.1 The Laser Principle -- 12.2 Light Amplification and Lasing -- 12.3 Double Heterojunction Laser. , 12.4 Lasers for Optical Data Storage and Optical Data Transmission -- 12.5 Laser Materials for Optical Data Transmission, an Example of Bandgap Engineering -- 12.6 Questions and Answers -- References -- 13 Transistors -- 13.1 The Bipolar Transistor -- 13.2 Field Effect Transistor -- 13.3 A MOSFET Problem Related to Miniaturization of Modern Electronics: High k-dielectrics -- 13.4 The Two-Dimensional Electron Gas, Realized in a MOSFET -- 13.5 Questions and Answers -- Reference -- 14 Integrated Circuits -- 14.1 Moore's Law -- 14.2 Photolithography: Components and Steps of Fabrication -- 14.3 Exposure in the Photolithography -- 14.4 Some Important Constituents of Integrated Circuits -- 14.5 Light Sources for Photolithography -- 14.6 Resolution Enhancement Techniques -- 14.7 Some Concluding Remarks on the Present Situation of Chip Technology -- 14.8 Questions and Answers -- References -- 15 Organic Electronics -- 15.1 Organic Materials for Electronics, a Totally Different Approach -- 15.2 Conjugated Double Bonds -- 15.3 Band Structure and Conductivity in Polymers -- 15.4 Polymer Conductivity by "Doping" -- 15.5 Conductivity of Polymers by Charge Carrier Injection -- 15.6 Charge Carrier Transport -- 15.7 Organic Light-Emitting Diodes (OLEDs) -- 15.8 Organic Solar Cells -- 15.9 Questions and Answers -- References -- 16 Towards Molecular Electronics -- 16.1 From "Top-Down" to "Bottom-Up" -- 16.2 Carbon Allotropes, Fullerenes -- 16.3 Carbon Nanotubes -- 16.4 Graphene -- 16.5 Single Molecule Interconnects and Anchor Groups -- 16.6 Molecular Switches -- 16.7 C-Based Electronics, Complementary to Si-Technology -- 16.8 Questions and Answers -- References -- List of Physics Comments -- Name Index -- Subject Index.

Weitere Ausg.: Print version: Winnacker, Albrecht The Physics Behind Semiconductor Technology Cham : Springer International Publishing AG,c2023 ISBN 9783031103131

Sprache: Englisch