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Integrated Electronics on Aluminum Nitride : Materials and Devices (2022)

Chaudhuri, Reet. ; SpringerLink 〈Online service〉

Cham :Springer International Publishing :

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UID:

almahu_9949419783602882

Umfang: XVI, 255 p. 124 illus., 122 illus. in color. , online resource.

Ausgabe: 1st ed. 2022.

ISBN: 9783031171994

Serie: Springer Theses, Recognizing Outstanding Ph.D. Research,

Inhalt: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Anmerkung: Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.

In: Springer Nature eBook

Weitere Ausg.: Printed edition: ISBN 9783031171987

Weitere Ausg.: Printed edition: ISBN 9783031172007

Weitere Ausg.: Printed edition: ISBN 9783031172014

Sprache: Englisch

DOI: 10.1007/978-3-031-17199-4

URL: https://doi.org/10.1007/978-3-031-17199-4

URL: Volltext (URL des Erstveröffentlichers)

URL: lizenzpflichtig

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Integrated electronics on aluminum nitride : materials and devices (2022)

Chaudhuri, Reet,

Cham, Switzerland :Springer,

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UID:

edoccha_9960962487302883

Umfang: 1 online resource (266 pages)

ISBN: 9783031171994

Serie: Springer Theses

Anmerkung: Intro -- Supervisor's Foreword -- Acknowledgments -- Contents -- Parts of This Thesis Have Been Published in the Following Journal Articles -- 1 Introduction -- 1.1 Brief History of Semiconductors in Communication -- 1.2 Layout of this Dissertation -- References -- 2 Polarization-Induced 2D Hole Gases in Undoped (In)GaN/AlN Heterostructures -- 2.1 Introduction -- 2.2 Polarization Charges in III-Nitride Heterostructures -- 2.3 The Undoped GaN/AlN 2DHG -- 2.4 Impurity Blocking Layers in the AlN Buffer Layer -- 2.5 Very High density InGaN/AlN 2DHGs -- 2.6 Conclusions -- 2.7 Future Directions -- References -- 3 GHz-Speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- 3.1 Introduction -- 3.2 Current Challenges for GaN pFETs -- 3.3 Mg-InGaN Ohmic Contacts to GaN/AlN 2DHG -- 3.4 Scaled RF GaN/AlN p-channel FETs -- 3.5 Benchmark -- 3.6 Future Directions -- References -- 4 Polarization-Induced 2D Electron and Holes in Undoped AlN/GaN/AlN Heterostructures -- 4.1 Introduction -- 4.2 The AlN/GaN/AlN Heterostructure -- 4.3 The Undoped 2D Electron-Hole Bilayer -- 4.4 AlN/GaN/AlN 2DEGs for High-Power RF HEMTs -- 4.4.1 Low-Field Transport -- 4.4.2 High-Field Velocities -- 4.4.3 Shubhnikov-de-Haas Oscillations -- 4.5 Future Directions -- References -- 5 AlN/GaN/AlN High Electron Mobility Transistors -- 5.1 Introduction -- 5.2 Thermal Advantage of AlN Buffer Layer -- 5.3 MBE-Grown AlN Buffer Layers on SiC for RF HEMTs -- 5.4 State-of-Art AlN/GaN/AlN HEMTs -- 5.5 In-situ AlN Passivation for Reduced Dispersion -- 5.5.1 GaN Channel Strain in AlN/GaN/AlN Heterostructures -- 5.5.2 2DEG Transport in In-situ Passivated AlN/GaN/AlN Heterostructures -- 5.5.3 Reduced Dispersion in AlN/GaN/AlN HEMTs -- 5.6 Enhancement-Mode AlN/GaN/AlN MOS-HEMTs with Ultra-Thin 3nm GaN Channels -- 5.7 Future Directions -- References. , 6 Integrated RF Electronics on the AlN Platform -- 6.1 Introduction -- 6.2 Survey of GaN-Based CMOS-Logic Realizations -- 6.3 AlN-Based CMOS Realizations -- 6.4 In-situ Sublimation Etch of GaN -- 6.5 Passive RF Devices on AlN Platform -- 6.5.1 Epitaxial AlN Bulk Acoustic Waveguide Resonators -- 6.5.2 SiC Substrate Integrated Waveguides (SIW) -- References -- 7 Epitaxial Growth of AlN-Based Heterostructures for Electronics -- 7.1 PA-MBE Growth of GaN/AlN 2DHGs -- 7.1.1 Detailed Growth Recipe -- 7.1.2 Variations in the 2DHG Active Region -- 7.1.3 Growth Condition Optimization Studies -- Optimizing the GaN/AlN Interface -- Large Area Growths -- 7.2 PA-MBE Growth of AlN/GaN/AlN 2DEGs -- 7.2.1 In-situ Cleaning of 6H-SiC -- 7.2.2 Detailed Growth Recipe -- 7.2.3 In-situ AlN passivated AlN/GaN/AlN HEMTs -- References -- 8 Electronics on Single-Crystal, Bulk AlN Substrates -- 8.1 Single-Crystal AlN Substrates for Transistors -- 8.2 Early Results -- References -- A Author's Biographical Sketch.

Weitere Ausg.: Print version: Chaudhuri, Reet Integrated Electronics on Aluminum Nitride Cham : Springer International Publishing AG,c2022 ISBN 9783031171987

Sprache: Englisch

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