UID:
almafu_9959185892202883
Umfang:
1 online resource (X, 574 p. 32 illus.)
Ausgabe:
Online edition Springer Lecture Notes Archive ; 041142-5
ISBN:
3-540-38382-4
Serie:
Lecture Notes in Physics, 133
Anmerkung:
General introduction -- Band structure of narrow gap semiconductors -- Dielectric anomalies in zero-gap semiconductors -- Electron scattering and classical transport phenomena in small-gap semiconductors -- Phonons in narrow gap semiconductors -- Intraband magneto-optics in InSb-type semiconductors -- Interband magnetooptics in narrow gap semiconductors -- Spin-flip Raman scattering and associated X(3) nonlinearities -- Impurity states in high magnetic fields -- Landau emission in semiconductors -- The Shubnikov-De Haas effect and the magnetic freeze out -- Electronic properties of cadmium arsenide -- Quantum transport in narrow-gap semiconductors -- Some aspects of the high field magnetoresistance in semiconductors -- Narrow-gap semimagnetic semiconductors -- Magnetic properties of narrow gap semiconductors -- Electronic Raman scattering in narrow gap semiconductors -- InAs-GaSb superlattices — synthesized narrow-gap semiconductors and semimetals -- On impurity states in gapless semiconductors -- Resonant states in semiconductors some applications of the Slater-Koster model -- Stress deformation effects on narrow gap semiconductors -- Hot electrons in narrow gap semiconductors -- Photogalvanic effects in noncentrosymmetric semiconductors -- Defects in IV–VI compounds -- Magnetooptical properties of IV–VI compounds -- Magnetoplasma waves in semiconductors -- Phase transition in IV-VI compounds -- Electric subbands in narrow gap semiconductors -- Surface-charge layers on the narrow gap semiconductors -- Crystal growth of narrow gap semiconductors theory and techniques -- Narrow-gap semiconductor detectors and lasers.
In:
Springer eBooks
Weitere Ausg.:
ISBN 3-540-10261-2
Sprache:
Englisch
DOI:
10.1007/3-540-10261-2
URL:
http://dx.doi.org/10.1007/3-540-10261-2
URL:
http://dx.doi.org/10.1007/3-540-10261-2
URL:
http://dx.doi.org/10.1007/3-540-10261-2
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