UID:
edoccha_9959185890902883
Format:
1 online resource (XIII, 408 p. 40 illus.)
Edition:
Online edition Springer Lecture Notes Archive ; 041142-5
ISBN:
3-540-38978-4
Series Statement:
Lecture Notes in Physics, 152
Note:
Bibliographic Level Mode of Issuance: Monograph
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Narrow gap semiconductors — the state op the art -- Growth of some important narrow gap semiconductors -- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), ?- and ?-EuP3 and their alloys -- Tm1?xEuxSe: New narrow gap magnetic semiconductors -- Electronic properties of KxRb1?xAu , an indirect small gap semiconductor -- Growth of Sb2Te3 single crystals by hot-wall-epitaxy -- THM growth of PbTe -- Misfit strain in epitaxial IV–VI semiconductor films -- Structure defects in Pb 1-xSnxTe solid solution heterocompositions -- Influence of impurity doping on the electrical properties of LPE grown Pb1?xSnxTe and PbSeyTe1?y -- Plasma reflection spectrum of the Pb 1?xSnxTe inhomogeneous layers and vapour transport process of Pb 1?xSnxTe -- Molecular beam epitaxy of CdTe and CdxHg1?xTe -- The investigation of the second phase in Hg1?xCdxTe crystals -- Structural and electrical properties of as grown CdxHg1?xTe epitaxial layers deposited by cathodic sputtering -- Interfacial energy bands for narrow-gap semiconductors -- 2D-subbands in III–V and narrow-gap semiconductors -- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors -- Pulse width dependent nonlinear absorption in small gap semiconductors -- Photo-hall measurements of high-density photoexcited electrons in Hg1?x CdxTe -- The photoluminescence study of CdxHg1?xTe alloys -- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field -- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te -- Excess carrier lifetime in Hg1?xCdxTe by population modulation spectroscopy -- Laser threshold and recombination in Pb1?xSnxTe AND PbS1?xSex -- Optical studies of a high density electron-hole plasma iN PbTe -- Far infrared optical properties of Cd3P2 AND Cd3As2 -- A new broadband near-millimeter wave detector using mercury-cadmium-telluride -- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER -- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure -- High resolution magneto-optical studies of free and bound hole excitations in InSb -- Two-photon spectroscopy in InSb with cw CO2 Lasers -- Uniaxial-stress-enhanced electron spin resonance in InSb -- Optical four-wave mixing in pbte epitaxial layers -- Spin-flip resonances in cadmium arsenide -- Peculiarities of the band structure of HgSe and mixed crystals Hg1?xCdxSe from the interband magnet absorption -- Bandstructure of Pb1?xGexTe in the C3v — Phase -- Band structure of cubic and rhombohedral GeTe -- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects -- Phase transitions and optical properties of IV–VI compounds -- Lattice dynamics and phase transitions in IV–VI compounds -- Pseudopotential approach to total energy calculations in narrow GAP semiconductors -- Lattice dynamics and phase transitions in IV–VI semiconducting compounds -- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys -- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1?XSnXTe and Pb 1?XGeXTe -- Coupled phase transitions in Pb1?xGexTe -- A neutron scattering study of lattice dynamics of HgTe and HgSe -- New aspects of the material and device technology of intrinsic infrared photodetectors -- HgCdTe liquid phase epitaxial growth technology -- Lattice-matched PbSnTe/PbTeSe heterostructure device technology -- Lead chalcogenide diode lasers: State of the art and applications -- Magnetic properties of semimagnetic semiconductors -- Magnetization of narrow gap semimagnetic semiconductors Hg1?xMnxTe AND Hg1?xMnxSe -- Microwave and far infrared magnetotransmission studies in Hg1?xMnxSe -- Acceptor states in semimagnetic semiconductors in a magnetic field -- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1?x?yCdxMnyTe -- Infrared magnetoabsorption in zero gap Hg1?xFexTe and Hg1?xFexSe mixed crystals -- The quantum transport and the magnetic levels in Pb1?xMnxTe -- Shubnikov-de Haas effects in (Cd1?xMnx)3As2 alloys -- Theory of magnetic susceptibility of narrow gap semiconductors -- Advances in synthesized superlattices -- Electronic properties of graphite intercalation compounds -- Comparison of transport properties in various semimetals systems -- Optical properties of PbTe-Pb1?xSnxTe superlattices prepared by a hot wall technique -- Screening of impurities in strong magnetic fields and its influence on the transverse conductivity -- Anomalous behaviour of the magnetoresistance of Hg1?xCdxTe in the extreme quantum limit -- Stationary and time-resolved magnetotransport in n-TYPE Hg0.8Cd0.2Te and n-type InSb in the extreme magnetic quantum limit -- Modification of the classical magnetic freeze-out manifestations in n-type Hg1?xCdxTe(x 〉 18%) due to the presence of resonant levels -- Ionized-defect-scattering mobility in n-PbTe -- High pressure electron mobility in low electron concentration InSb samples at 77K -- Shubnikov de Haas oscillations in Cd3?xZnxAs2 alloys -- Bi2Se3 and Bi2Te3 single crystals doped with Sn atoms -- Ultrasonic anomaly near zero-gap state in CdxHgl1?xSe -- Size effects in thin semimetal wires -- Pressure spectroscopy of localized levels -- First order phase transition of Hall coefficient versus magnetic field, under hydrostatic pressure due to freeze-out on acceptor state in Hg0.836Cd0.164Te -- Nonradiative recombination at deep impurity levels in p-type Hg1–xCdxTe -- On the thermodynamic instability of n-type HgCdTe, and on acceptor levels, transport properties, and liftime of p-type HgCdTe -- Ion-implantation-induced defect levels in Pb1?xSnxTe -- Photoluminescence CF Pb1?xSnxTe (x ? 0.2) crystals doped with Cd and In -- Energy levels of native defects in n-Pb1-xSnxSe -- Localized “deep” defect states in PbSexTe1?x mixed crystals -- Strong coupling between the resonant state and the crystal lattice in n-InSb -- Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability -- The widening application of narrow-gap semiconductors — closing address at the 4th international conference on the physics of narrow-gap semiconductors.
,
English
In:
Springer eBooks
Additional Edition:
ISBN 3-540-11191-3
Language:
English
DOI:
10.1007/3-540-11191-3
URL:
http://dx.doi.org/10.1007/3-540-11191-3
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