UID:
almahu_9948193170002882
Umfang:
VI, 178 S.
,
online resource.
Ausgabe:
1st ed. 1988.
ISBN:
9783540753520
Serie:
Advances in Solid State Physics, 28
Anmerkung:
Charge-induced structural relaxation in hydrogenated amorphous silicon -- Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions -- Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures -- Recent developments in the theory of highly excited semiconductors -- The development of a 4 Mbit DRAM -- Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures -- Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions -- On the theory of high Tc superconductors.
In:
Springer eBooks
Weitere Ausg.:
Printed edition: ISBN 9783662160947
Weitere Ausg.:
Printed edition: ISBN 9783528080341
Sprache:
Deutsch
URL:
https://doi.org/10.1007/BFb0107844
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