UID:
almafu_9958098453702883
Format:
1 online resource (400 p.)
Edition:
1st ed. 2005.
ISBN:
1-280-34691-4
,
9786610346912
,
3-540-29499-6
Series Statement:
Springer series in advanced microelectronics, 19
Content:
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Note:
Description based upon print version of record.
,
Basic technological processes and defect formation in the components of device structures -- Effects of defects on electrophysical and functional parameters in semiconducting structures and devices -- Techniques for high-temperature gettering -- Physical foundations for low-temperature gettering techniques.
,
English
Additional Edition:
ISBN 3-642-06570-8
Additional Edition:
ISBN 3-540-26244-X
Language:
English
DOI:
10.1007/3-540-29499-6
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