UID:
almahu_9949697279502882
Format:
1 online resource (476 p.)
ISBN:
1-281-00347-6
,
9786611003470
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0-08-047490-X
Content:
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics a
Note:
Description based upon print version of record.
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Front Cover; Germanium-Based Technologies; Copyright Page; Contents; Editors; Contributors; List of Acronyms; List of Symbols; Introduction; 1 Introduction; 2 Historical Perspective and Milestones; 3 Ge as a Novel ULSI Substrate: Opportunities and Challenges; 4 Outline of the Book; References; Color Plates; Chapter 1 Germanium Materials; 1.1 Introduction; 1.2 Bulk Wafer Manufacturing; 1.2.1 Germanium raw materials: supply and production flow sheet; 1.2.1.1 Supply; 1.2.1.2 Production flow sheet; 1.2.2 Germanium crystal growth
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1.2.2.1 Introduction and specific features of Czochralski Ge crystal growth1.2.2.2 Ge single crystals for IR optics; 1.2.2.3 HP-Ge crystals for radiation detectors; 1.2.2.4 Dislocation-free Ge crystals; 1.2.2.5 Modeling of Ge crystal growth; 1.2.3 Germanium wafer manufacturing; 1.2.3.1 Introduction; 1.2.3.2 Wafer preparation: general remarks; 1.2.3.3 Wafer preparation: process steps; 1.2.3.4 Germanium recycling; 1.3 GOI Substrates; 1.3.1 Back-grind SOI; 1.3.2 GOI substrates by layer transfer; 1.3.2.1 Donor wafers; 1.3.2.2 GOI realization; 1.3.2.3 Characterization of GOI substrates
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1.3.2.4 GOI MOSFETs1.3.2.5 GOI as III-V epitaxy template; 1.4 General Conclusion; References; Chapter 2 Grown-in Defects in Germanium; 2.1 Introduction; 2.2 Intrinsic Point Defects in Germanium; 2.2.1 Simulation of intrinsic point defect properties; 2.2.2 Experimental data on vacancy properties; 2.2.3 Application of the Voronkov model to germanium; 2.3 Extrinsic Point Defects; 2.3.1 Dopants; 2.3.2 Neutral point defects; 2.3.3 Carbon; 2.3.4 Hydrogen; 2.3.5 Oxygen; 2.3.6 Nitrogen; 2.3.7 Silicon; 2.4 Dislocation Formation During Czochralski Growth; 2.4.1 Thermal simulation
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2.4.2 Development of mechanical stresses2.4.3 Mechanical properties of germanium; 2.4.4 Dislocation nucleation and multiplication during crystal pulling; 2.4.5 Electrical impact of dislocations in germanium; 2.5 Point Defect Clustering; 2.5.1 Experimental observations of vacancy clustering; 2.5.2 Modeling and simulation of vacancy cluster formation; 2.6 Conclusions; Acknowledgements; References; Chapter 3 Diffusion and Solubility of Dopants in Germanium; 3.1 Introduction; 3.2 Diffusion in Semiconductors; 3.2.1 Diffusion mechanisms; 3.2.2 Self-diffusion
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3.3 Intrinsic Point Defects in Germanium3.3.1 Quenching; 3.3.2 Irradiation; 3.4 Self- and Group IV Diffusion in Germanium and Silicon; 3.4.1 Radioactive tracer experiments; 3.4.2 Isotope effects and Group IV (Si; Sn) diffusion in Ge; 3.4.3 Doping and pressure effects; 3.4.4 Diffusion of Ge in Si; 3.5 Solubility of Impurities in Germanium; 3.6 Diffusion of Group III and V Dopants in Germanium; 3.6.1 Group III acceptor diffusion; 3.6.1.1 Boron; 3.6.1.2 Aluminum; 3.6.1.3 Indium and gallium; 3.6.2 Group V donor diffusion; 3.6.2.1 Phosphorus; 3.6.2.2 Arsenic; 3.6.2.3 Antimony
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3.6.3 Electric field effects on dopant diffusion in Ge
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English
Additional Edition:
ISBN 0-08-044953-0
Language:
English
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