Format:
Online-Ressource (XVI, 124 p. 83 illus, online resource)
ISBN:
9789811043826
Series Statement:
Springer Theses, Recognizing Outstanding Ph.D. Research
Content:
Acknowledge -- Abstract -- Introduction -- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials -- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials -- Optimization Component Ti0.43Sb2Te3 -- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device -- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy -- Ti0.43Sb2Te3 Based Phase Change Memory Chip -- Summary -- References -- Published Papers and Patents -- Bibliography.
Content:
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Note:
"Doctoral thesis accepted by Chinese Academy of Science, Shanghai, China
,
Includes bibliographical references
Additional Edition:
ISBN 9789811043819
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 978-981-10-4381-9
Language:
English
Keywords:
Hochschulschrift
DOI:
10.1007/978-981-10-4382-6
URL:
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