In:
Advanced Functional Materials, Wiley, Vol. 27, No. 13 ( 2017-04)
Kurzfassung:
Monolayer W x Mo 1− x S 2 ‐based field effect transistors are demonstrated for the first time on the monolayer W x Mo 1− x S 2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as‐grown monolayer W x Mo 1− x S 2 . Electronic band structure of monolayer W x Mo 1− x S 2 has been calculated using first‐principle theory. The thermal stability of monolayer W x Mo 1− x S 2 has been evaluated using Raman‐temperature measurement. Carrier transport study on the fabricated W x Mo 1− x S 2 FETs has been analyzed using temperature‐dependent current measurement, and a field effect mobility of ≈30 cm 2 V −1 s −1 at 300 K is obtained.
Materialart:
Online-Ressource
ISSN:
1616-301X
,
1616-3028
DOI:
10.1002/adfm.201606469
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2017
ZDB Id:
2029061-5
ZDB Id:
2039420-2
SSG:
11
