In:
Advanced Materials, Wiley, Vol. 29, No. 35 ( 2017-09)
Kurzfassung:
New 3,3′‐dithioalkyl‐2,2′‐bithiophene ( SBT )‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)⋯S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle 〈 1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm 2 V −1 s −1 . Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray diffraction experiments.
Materialart:
Online-Ressource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.201702414
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2017
ZDB Id:
1474949-X