In:
Advanced Materials, Wiley, Vol. 30, No. 31 ( 2018-08)
Kurzfassung:
Spin–orbit torque (SOT)‐induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin‐logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in‐plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange‐coupled with the in‐plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin‐logic devices.
Materialart:
Online-Ressource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.201801318
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2018
ZDB Id:
1474949-X