In:
Advanced Materials, Wiley, Vol. 34, No. 40 ( 2022-10)
Abstract:
The learning and inference efficiencies of an artificial neural network represented by a cross‐point synaptic memristor array can be achieved using a selector, with high selectivity ( I on / I off ) and sufficient death region, stacked vertically on a synaptic memristor. This can prevent a sneak current in the memristor array. A selector with multiple jar‐shaped conductive Cu filaments in the resistive switching layer is precisely fabricated by designing the Cu ion concentration depth profile of the CuGeSe layer as a filament source, TiN diffusion barrier layer, and Ge 3 Se 7 switching layer. The selector performs super‐linear‐threshold‐switching with a selectivity of 〉 10 7 , death region of −0.70–0.65 V, holding time of 300 ns, switching speed of 25 ns, and endurance cycle of 〉 10 6 . In addition, the mechanism of switching is proven by the formation of conductive Cu filaments between the CuGeSe and Ge 3 Se 7 layers under a positive bias on the top Pt electrode and an automatic rupture of the filaments after the holding time. Particularly, a spiking deep neural network using the designed one‐selector‐one‐memory cross‐point array improves the Modified National Institute of Standards and Technology classification accuracy by ≈3.8% by eliminating the sneak current in the cross‐point array during the inference process.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.202203643
Language:
English
Publisher:
Wiley
Publication Date:
2022
detail.hit.zdb_id:
1474949-X