In:
Advanced Materials Technologies, Wiley, Vol. 8, No. 3 ( 2023-02)
Kurzfassung:
Here, the fabrication of an addressable 8 × 8 photodetector array is reported by combining In 2 Se 3 nanofilm with periodic inverse micropyramid‐Si (PIMP‐Si), which is obtained through colloidal lithography and anisotropic wet etching. Due to the unique configuration and the outstanding light trapping effect, the as‐fabricated heterojunction device presents an excellent self‐powered photoresponse over the broadband wavelength range from 265 to 1300 nm, with a peak sensitivity at ≈810 nm. The responsivity, specific detectivity, and rise/fall time are estimated to be 0.58 A W −1 , 1.76 × 10 12 Jones, and 5.1/18 µs, respectively, which are competitive in comparison with other devices with similar geometries. Meanwhile, the photodetector array displays a satisfactory pixel‐to‐pixel uniformity, which allows the device to record the full‐color image of “HFUT” with satisfying resolution, revealing the potential application of the PIMP‐Si/In 2 Se 3 heterojunction photodetector array for real‐time red‐green‐blue‐infrared image sensing and video capturing.
Materialart:
Online-Ressource
ISSN:
2365-709X
,
2365-709X
DOI:
10.1002/admt.202200863
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2023
ZDB Id:
2850995-X