In:
Crystal Research and Technology, Wiley, Vol. 48, No. 2 ( 2013-02), p. 94-99
Abstract:
In this paper, the chalcopyrite CuInSe2 thin films were fabricated from a selenization of electrodeposited Cu‐In layers. In this study, the electrodeposition time of the In layer was set, but that for the Cu layer was not. The thin films were selenized in a sealed glass tube with pure Se powder by three different Cu layer samples at various electrodeposition times at 500 °C for 2 hours. An FE‐SEM image of the sample shows that the copper‐rich product has irregular agglomerates with a dense surface. The X‐ray diffraction patterns show CuInSe 2 peaks for all samples. However, the X‐ray diffraction pattern reveals CuSe 2 peaks when the electrodeposition time of the Cu layer increases. On the other hand, the band gap ( E g ) of the samples decreases from 1.15 to 1.07 eV when the Cu/In ratio increases.
Type of Medium:
Online Resource
ISSN:
0232-1300
,
1521-4079
DOI:
10.1002/crat.201200269
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
1480828-6