In:
Microwave and Optical Technology Letters, Wiley, Vol. 54, No. 2 ( 2012-02), p. 329-332
Abstract:
A 60 GHz monolithic low‐noise amplifier (LNA) fabricated with 0.15‐μm gallium‐arsenic pseudomorphic high‐electron mobility transistors is presented.Using a three‐stage cascaded topology and in‐stage transmission lines, the LNA is designed using 5 V power supply voltage. Measured results of the LNA show the peak gain of 13.5 dB and the lowest noise figure of 5.15 dB around 61 GHz, and the 1 dB compression point (P 1dB ) of the LNA is −10 dBm. The LNA also demonstrates a complete design flow for millimeter‐wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:329–332, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26525
Type of Medium:
Online Resource
ISSN:
0895-2477
,
1098-2760
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
2000574-X