In:
Progress in Photovoltaics: Research and Applications, Wiley, Vol. 20, No. 3 ( 2012-05), p. 350-355
Abstract:
We demonstrate the use of a copper‐based metallization scheme for the specific application of thin‐film epitaxial silicon wafer equivalent (EpiWE) solar cells with rear chemical vapor deposition emitter and conventional POCl 3 emitter. Thin‐film epitaxial silicon wafer equivalent cells are consisting of high‐quality epitaxial active layer of only 30 µm, beneath which a highly reflective porous silicon multilayer stack is embedded. By combining Cu‐plating metallization and narrow finger lines with an epitaxial cell architecture including the porous silicon reflector, a J sc exceeding 32 mA/cm 2 was achieved. We report on reproducible cell efficiencies of 〉 16% on 〉 70‐cm 2 cells with rear epitaxial chemical vapor deposition emitters and Cu contacts. Copyright © 2011 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
1062-7995
,
1099-159X
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
2023295-0