In:
physica status solidi (a), Wiley, Vol. 207, No. 9 ( 2010-09), p. 2105-2109
Abstract:
We successfully improved a merged diamond diode, namely a Schottky‐pn diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p + ‐type layer and a Schottky metal. According to the analysis of operation mechanisms based on band diagrams, we increased the acceptor concentration in the p + ‐type layer in order to decrease the on‐resistance ( R on S ), and increased the n‐type layer width to reach higher blocking voltage ( V block ). Consequently, much lower R on S of 0.03 mΩ cm 2 and higher V block than those of the previously reported diamond SPND were achieved simultaneously. Thus, we elucidated experimentally that the diamond SPND has no trade‐off relationship between R on S and V block , and is suitable for low‐loss high‐power switching devices.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201000149
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2