In:
physica status solidi (a), Wiley, Vol. 208, No. 4 ( 2011-04), p. 937-942
Abstract:
We have investigated the carrier transport of a single‐crystal diamond p + ‐i‐n + junction diode fabricated using low‐resistance hopping p + and n + layers, which showed high‐performance diode characteristics. By comparing the diode characteristics of the p + ‐i‐n + junction with those of the p + ‐n + diode and metal/n + /metal structure, the following results were obtained. The carrier transport of the p + ‐i‐n + junction is described using the band conduction caused by the free carriers, although the current transport in both p + and n + layers is mainly by the hopping conduction. The i‐layer in the p + ‐i‐n + junction provides a low‐resistance layer for the forward current and a good blocking layer for the reverse current. The contact resistance of the n + /metal layer affects the carrier transport of the p + ‐i‐n + diode, which lacks the ohmic property even with the phosphorous concentration around 10 20 cm −3 .
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201026490
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2