In:
physica status solidi (a), Wiley, Vol. 208, No. 7 ( 2011-07), p. 1658-1661
Abstract:
A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO 2 /p‐Si heterostructure containing a thin oxide layer of d = 20 nm thickness and implanted by Si + ions. With an implantation energy of 12 keV the maximum density of the implanted Si + profile is located close to the SiO 2 –Si interface at a depth of 18 nm, but a piling‐up of Si is also found immediately beneath the surface up to 2 nm, i.e., within the escape depth of XPS electrons. Thus we may expect a partial phase separation associated with Si aggregation and nanocluster formation imbedded in a non‐stoichiometric SiO x matrix. By means of XPS and in comparison to X‐ray emission spectroscopy (XES) the related changes of the VB structure are investigated.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201026713
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2