In:
physica status solidi (a), Wiley, Vol. 213, No. 7 ( 2016-07), p. 1767-1773
Abstract:
Abstractauthoren We discuss the carrier transport mechanism in amorphous zinc oxynitride (ZnON) thin films fabricated by means of long‐throw magnetron sputtering. ZnON films were radio‐frequency sputtered from a metallic zinc target in a reactive atmosphere consisting of , , and Ar. The electrical conductivity of the films was controlled via variation of the deposition pressure and substrate temperature. Room temperature deposition yields amorphous, n‐type semiconducting ZnON thin films with a maximum Hall mobility of and carrier concentrations of . The mobility can be further increased up to the range by moderate substrate heating or annealing up to while maintaining the amorphous phase. From temperature‐dependent Hall effect measurements, we deduced that a percolation conduction model is most likely for the electron transport in the as‐grown ZnON thin films. For annealed samples, a quasi‐metallic behavior is observed.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201532939
Language:
English
Publisher:
Wiley
Publication Date:
2016
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
