In:
physica status solidi (a), Wiley, Vol. 214, No. 10 ( 2017-10)
Kurzfassung:
We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. High‐resolution transmission electron microscopy reveals sharp crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v‐defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates with non‐optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III‐N on Si epitaxy.
Materialart:
Online-Ressource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.v214.10
DOI:
10.1002/pssa.201700190
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2017
ZDB Id:
1481091-8
ZDB Id:
208850-2