In:
physica status solidi (a), Wiley, Vol. 214, No. 10 ( 2017-10)
Abstract:
Compared with GaN‐based visible GaN/InGaN multiple‐quantum‐well laser diodes (LDs), near‐ultraviolet LDs may suffer from a sever hole leakage due to the shallower quantum wells (QWs). Here, a 10 nm n‐type AlGaN hole blocking layer (HBL) is proposed to put before the first quantum barrier layer and form a barrier on the valence band to prevent injected holes from leaking into the n‐type region. Furthermore, the effect of Al composition of Al x Ga 1− x N HBL on LD performance is studied. Theoretical analysis is performed by using advanced device simulation. The simulation results show that lower threshold current and higher output power of LD can be obtained when Al composition of Al x Ga 1− x N HBL is 0.23. This result can be attributed to a dramatically reduced electron and hole leakage, and more stimulated recombination in QWs.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.v214.10
DOI:
10.1002/pssa.201700320
Language:
English
Publisher:
Wiley
Publication Date:
2017
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2