In:
physica status solidi (b), Wiley, Vol. 257, No. 2 ( 2020-02)
Abstract:
Herein, the characterization of n‐doped InGaP:Si shells in coaxial not‐intentionally doped (nid)‐GaAs/n‐InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor‐phase epitaxy is reported. The multi‐tip scanning tunneling microscopy technique is used for contact‐independent resistance profiling along the tapered nid‐GaAs/n‐InGaP core–shell nanowires to estimate the established emitter shell doping concentration to N D ≈ 3 · 10 18 cm −3 . Contacts on these shells are demonstrated and exhibit ohmic current–voltage characteristics after annealing. Application potential is demonstrated by the growth and processing of coaxial p‐GaAs/n‐InGaP junctions in n–p–n core–multishell nanowires, with n‐InGaP being the electron‐supplying emitter material. Current–voltage characteristics and temperature‐dependent electroluminescence measurements substantiate successful doping of the n‐InGaP shell. A tunneling‐assisted contribution to the leakage currents of the investigated p–n junctions is verified by the sub‐bandgap luminescence at low temperatures and is attributed to radiative tunneling processes.
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.201900358
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7