In:
physica status solidi c, Wiley, Vol. 5, No. 6 ( 2008-05), p. 2349-2351
Abstract:
We propose a new nitride photocatalyst of an n‐n + ‐GaN structure to increase H 2 gas generation. This structure consists of a thin lightly‐doped n‐type layer on a heavily‐doped n + ‐type layer to realize an optimized depletion layer for optical absorption and highly conductive region, respectively. An optimized n‐n + ‐GaN structure could generate much more H 2 gas rather than a single n‐GaN layer structure by about 1.4 times. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200778536
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0