In:
physica status solidi c, Wiley, Vol. 6, No. S2 ( 2009-06)
Kurzfassung:
Al 1–x In x N ternary alloys with solid phase indium compositions between x = 0.15 and 0.28 have been grown by metalorganic chemical vapor deposition under indium rich conditions. Within the growth temperature range of 750‐810 °C the indium incorporation into the solid is increasingly reduced by a competing process with thermal activation energy of 1.07 eV. Using this growth scheme, smooth epitaxial layers with root mean‐squares surfaces roughness of 0.3‐0.8 nm are obtained. Extrinsic origin is suggested for the low temperature photoluminescence peak associated with these layers. (Al,In)N films lattice‐matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Materialart:
Online-Ressource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200880916
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2009
ZDB Id:
2105580-4
ZDB Id:
2102966-0