In:
physica status solidi c, Wiley, Vol. 10, No. 9 ( 2013-09), p. 1214-1217
Abstract:
We analyse the spin relaxation length during vertical electron transport in spin light‐emitting diode devices at room temperature. We obtain a spin relaxation length of 27 nm in remanence. When a magnetic field is applied, spin relaxation is significantly reduced during transport to the active region of the device. This results in a nearly doubled spin relaxation length at 2T magnetic field strength.
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.201200689
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
