In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 7, No. 3 ( 2013-03), p. 196-198
Abstract:
Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility ( μ FE ) of 13.2 cm 2 /Vs was obtained for the ZTO TFTs, the subthreshold gate swing ( SS ) and threshold voltage ( V th ) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ FE value of 18.7 cm 2 /Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.201206486
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2259465-6