In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 9, No. 6 ( 2015-06), p. 338-343
Kurzfassung:
Cu 2 ZnSi(S,Se) 4 and Cu 2 Si(S,Se) 3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu 2 SiS 3 , Cu 2 SiSe 3 and Cu 2 ZnSiSe 4 thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu 2 Si(S,Se) 3 and Cu 2 ZnSiSe 4 phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu 2 SiSe 3 and Cu 2 SiS 3 , and quaternary Cu 2 ZnSiSe 4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Materialart:
Online-Ressource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.201510125
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2015
ZDB Id:
2259465-6
